SCT3120ALGC11 SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM

  • RS Stock No. 150-1488
  • Mfr. Part No. SCT3120ALGC11
  • Manufacturer ROHM
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant

Attribute Value
Channel Type N
Maximum Continuous Drain Current 21 A
Maximum Drain Source Voltage 650 V
Package Type TO-247N
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 158.4 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5.6V
Minimum Gate Threshold Voltage 2.7V
Maximum Power Dissipation 103 W
Transistor Configuration Single
Maximum Gate Source Voltage 22 V
Number of Elements per Chip 1
Transistor Material SiC
Length 16mm
Width 5mm
Maximum Operating Temperature +175 °C
Height 21mm
Typical Gate Charge @ Vgs 38 nC @ 18 V
On back order for despatch 22/07/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each
$ 11.08
(exc. GST)
$ 12.19
(inc. GST)
Per unit
1 - 1
2 - 4
5 - 9
10 - 49
50 +
Packaging Options:
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