SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11
- RS Stock No.:
- 148-6949
- Mfr. Part No.:
- SCT3120ALGC11
- Brand:
- ROHM
270 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 30)
$11.248
(exc. GST)
$12.373
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 120 | $11.248 | $337.44 |
| 150 + | $10.123 | $303.69 |
| *price indicative | ||
- RS Stock No.:
- 148-6949
- Mfr. Part No.:
- SCT3120ALGC11
- Brand:
- ROHM
Technical data sheets
Legislation and Compliance
Product Details
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247N |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 158.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.6V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 103 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 22 V |
| Maximum Operating Temperature | +175 °C |
| Width | 5mm |
| Transistor Material | SiC |
| Length | 16mm |
| Typical Gate Charge @ Vgs | 38 nC @ 18 V |
| Number of Elements per Chip | 1 |
| Height | 21mm |
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