SCT3080KLGC11 SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247N ROHM

  • RS Stock No. 148-6948
  • Mfr. Part No. SCT3080KLGC11
  • Manufacturer ROHM
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 31 A
Maximum Drain Source Voltage 1200 V
Maximum Drain Source Resistance 120 mΩ
Maximum Gate Threshold Voltage 5.6V
Minimum Gate Threshold Voltage 2.7V
Maximum Gate Source Voltage 22 V
Package Type TO-247N
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 165 W
Forward Transconductance 4.4S
Dimensions 16 x 5 x 21mm
Number of Elements per Chip 1
Width 5mm
Length 16mm
Maximum Operating Temperature +175 °C
Typical Input Capacitance @ Vds 785 pF @ 800 V
Height 21mm
Typical Gate Charge @ Vgs 60 nC @ 18 V
Typical Turn-On Delay Time 15 ns
Transistor Material SiC
Typical Turn-Off Delay Time 29 ns
30 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 30)
$ 204.704
(exc. GST)
$ 225.174
(inc. GST)
units
Per unit
Per Tube*
30 +
$204.704
$6,141.12
*price indicative
Related Products
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power ...
Description:
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling ...
N-Channel Power MOSFETs designed specifically for linear operation. ...
Description:
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
Silicon carbide (SiC) MOSFETs feature very low static ...
Description:
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power ...
Description:
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling ...