N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-220 Infineon IRL1404ZPBF

RS Stock No.:: 145-9602
Mfr. Part No.:: IRL1404ZPBF
Brand:: Infineon

N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-220 Infineon IRL1404ZPBF

This image is representative of the product range

On back order for despatch 23/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 50)

$3.25

(exc. GST)

$3.57

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$3.25	$162.50
250 +	$2.925	$146.25
*price indicative

RS Stock No.:: 145-9602
Mfr. Part No.:: IRL1404ZPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Not Applicable

Product Details

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	200 A
Maximum Drain Source Voltage	40 V
Package Type	TO-220
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.7V
Minimum Gate Threshold Voltage	1.4V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	75 nC @ 5 V
Minimum Operating Temperature	-55 °C
Height	8.77mm