N-Channel MOSFET, 298 A, 60 V, 3-Pin I2PAK Infineon IRL60SL216
- RS Stock No.:
- 145-9185
- Mfr. Part No.:
- IRL60SL216
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 145-9185
- Mfr. Part No.:
- IRL60SL216
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
StrongIRFET™ Logic-Level Power MOSFET, Infineon
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.
Optimal RDS(on) @ VGS = +4.5V
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
Suitable for battery-powered systems
Applications: Motor drivers, synchronous rectifier systems, OR-ing & Redundant power switches, DC-DC converters
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 298 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.4V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Typical Gate Charge @ Vgs | 170 nC @ 4.5 V |
| Length | 10.67mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Height | 11.3mm |
| Minimum Operating Temperature | -55 °C |
| Series | StrongIRFET |