N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK Infineon IRLZ34NSTRLPBF

RS Stock No.:: 145-8936
Mfr. Part No.:: IRLZ34NSTRLPBF
Brand:: Infineon

N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK Infineon IRLZ34NSTRLPBF

This image is representative of the product range

800 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 800)

$0.915

(exc. GST)

$1.007

(inc. GST)

Units	Per unit	Per Reel*
800 - 3200	$0.915	$732.00
4000 +	$0.823	$658.40
*price indicative

RS Stock No.:: 145-8936
Mfr. Part No.:: IRLZ34NSTRLPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	11.3mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Length	10.67mm
Typical Gate Charge @ Vgs	25 nC @ 5 V
Forward Diode Voltage	1.3V
Height	4.83mm
Minimum Operating Temperature	-55 °C