N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-220AB Infineon IRLZ44ZPBF

RS Stock No.:: 145-8612
Mfr. Part No.:: IRLZ44ZPBF
Brand:: Infineon

N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-220AB Infineon IRLZ44ZPBF

This image is representative of the product range

On back order for despatch 29/11/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 50)

$1.853

(exc. GST)

$2.038

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$1.853	$92.65
250 +	$1.668	$83.40
*price indicative

RS Stock No.:: 145-8612
Mfr. Part No.:: IRLZ44ZPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	51 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	80 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	24 nC @ 5 V
Height	8.77mm
Minimum Operating Temperature	-55 °C