P-Channel MOSFET, 2.7 A, 500 V, 3-Pin TO-220AB onsemi FQP3P50
- RS Stock No.:
- 145-5369
- Mfr. Part No.:
- FQP3P50
- Brand:
- onsemi
On back order for despatch 07/02/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 50)
$2.047
(exc. GST)
$2.252
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | $2.047 | $102.35 |
| 100 - 150 | $1.996 | $99.80 |
| 200 + | $1.965 | $98.25 |
| *price indicative | ||
- RS Stock No.:
- 145-5369
- Mfr. Part No.:
- FQP3P50
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2.7 A |
| Maximum Drain Source Voltage | 500 V |
| Series | QFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.9 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 85 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 4.7mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Length | 10.1mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Height | 9.4mm |
| Minimum Operating Temperature | -55 °C |