N-Channel MOSFET, 400 A, 40 V, 7-Pin D2PAK-7 Infineon IRFS3004TRL7PP

RS Stock No.:: 130-0992
Mfr. Part No.:: IRFS3004TRL7PP
Brand:: Infineon

N-Channel MOSFET, 400 A, 40 V, 7-Pin D2PAK-7 Infineon IRFS3004TRL7PP

This image is representative of the product range

On back order for despatch 01/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Pack of 2)

$7.525

(exc. GST)

$8.277

(inc. GST)

Units	Per unit	Per Pack*
2 +	$7.525	$15.05
*price indicative

RS Stock No.:: 130-0992
Mfr. Part No.:: IRFS3004TRL7PP
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	400 A
Maximum Drain Source Voltage	40 V
Package Type	D2PAK-7
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	1.25 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	380 W
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Typical Gate Charge @ Vgs	160 nC @ 20 V
Maximum Operating Temperature	+175 °C
Width	4.83mm
Number of Elements per Chip	1
Height	9.65mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V