N-Channel MOSFET, 180 A, 40 V, 3-Pin DPAK Infineon IRFR7440TRPBF

RS Stock No.:: 130-0989
Mfr. Part No.:: IRFR7440TRPBF
Brand:: Infineon

N-Channel MOSFET, 180 A, 40 V, 3-Pin DPAK Infineon IRFR7440TRPBF

This image is representative of the product range

10 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 5)

$2.298

(exc. GST)

$2.528

(inc. GST)

Units	Per unit	Per Pack*
5 - 495	$2.298	$11.49
500 - 995	$2.256	$11.28
1000 +	$2.212	$11.06
*price indicative

RS Stock No.:: 130-0989
Mfr. Part No.:: IRFR7440TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	40 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.2V
Maximum Power Dissipation	140 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	89 nC @ 20 V
Maximum Operating Temperature	+175 °C
Length	6.73mm
Width	2.39mm
Height	6.22mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C