N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC Infineon IRF6648TRPBF

RS Stock No.:: 130-0948
Mfr. Part No.:: IRF6648TRPBF
Brand:: Infineon

N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC Infineon IRF6648TRPBF

This image is representative of the product range

On back order for despatch 10/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Pack of 2)

$3.125

(exc. GST)

$3.437

(inc. GST)

Units	Per unit	Per Pack*
2 - 1198	$3.125	$6.25
1200 - 2398	$3.055	$6.11
2400 +	$3.01	$6.02
*price indicative

RS Stock No.:: 130-0948
Mfr. Part No.:: IRF6648TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	86 A
Maximum Drain Source Voltage	60 V
Package Type	DirectFET ISOMETRIC
Series	DirectFET, HEXFET
Mounting Type	Surface Mount
Maximum Drain Source Resistance	7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.9V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	89 W
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	6.35mm
Width	5.05mm
Typical Gate Charge @ Vgs	36 nC @ 10 V
Forward Diode Voltage	1.3V
Height	0.5mm
Minimum Operating Temperature	-40 °C