N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 Infineon IPP60R099P6XKSA1

RS Stock No.:: 130-0924
Mfr. Part No.:: IPP60R099P6XKSA1
Brand:: Infineon

N-Channel MOSFET, 37.9 A, 650 V, 3-Pin TO-220 Infineon IPP60R099P6XKSA1

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483 In Global stock for delivery within 10 working day(s)

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Price (ex. GST) Each

$9.83

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$10.81

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1 +	$9.83

RS Stock No.:: 130-0924
Mfr. Part No.:: IPP60R099P6XKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOS^™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

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MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	37.9 A
Maximum Drain Source Voltage	650 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	99 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	278 W
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.57mm
Length	10.36mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	70 nC @ 10 V
Height	15.95mm
Forward Diode Voltage	0.9V
Minimum Operating Temperature	-55 °C
Series	CoolMOS P6