P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 Infineon SPP80P06PHXKSA1

RS Stock No.:: 124-8828
Mfr. Part No.:: SPP80P06PHXKSA1
Brand:: Infineon

P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 Infineon SPP80P06PHXKSA1

1400 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 50)

$5.141

(exc. GST)

$5.655

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$5.141	$257.05
100 - 150	$5.057	$252.85
200 +	$4.935	$246.75
*price indicative

RS Stock No.:: 124-8828
Mfr. Part No.:: SPP80P06PHXKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	60 V
Series	SIPMOS
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	23 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	340 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.36mm
Typical Gate Charge @ Vgs	115 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.57mm
Transistor Material	Si
Height	15.95mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.6V