N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 onsemi NDT3055L

RS Stock No.:: 124-1724
Mfr. Part No.:: NDT3055L
Brand:: onsemi

N-Channel MOSFET, 4 A, 60 V, 3-Pin SOT-223 onsemi NDT3055L

This image is representative of the product range

On back order for despatch 15/07/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 4000)

$0.667

(exc. GST)

$0.734

(inc. GST)

Units	Per unit	Per Reel*
4000 - 16000	$0.667	$2,668.00
20000 +	$0.60	$2,400.00
*price indicative

RS Stock No.:: 124-1724
Mfr. Part No.:: NDT3055L
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	3.56mm
Typical Gate Charge @ Vgs	13 nC @ 10 V
Length	6.5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	1.6mm
Minimum Operating Temperature	-65 °C