- RS Stock No.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
On back order for despatch 02/08/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 50)
$2.765
(exc. GST)
$3.041
(inc. GST)
Units | Per unit | Per Tube* |
50 - 50 | $2.765 | $138.25 |
100 - 150 | $2.697 | $134.85 |
200 + | $2.654 | $132.70 |
*price indicative |
- RS Stock No.:
- 124-1672
- Mfr. Part No.:
- RFP50N06
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 50 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-220AB |
Series | MegaFET |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 22 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 131 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.83mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Length | 10.67mm |
Typical Gate Charge @ Vgs | 125 nC @ 20 V |
Height | 9.4mm |
Minimum Operating Temperature | -55 °C |
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