N-Channel MOSFET, 70 A, 60 V, 3-Pin TO-220AB onsemi RFP70N06

RS Stock No.:: 124-1664
Mfr. Part No.:: RFP70N06
Brand:: onsemi

N-Channel MOSFET, 70 A, 60 V, 3-Pin TO-220AB onsemi RFP70N06

150 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 50)

$2.406

(exc. GST)

$2.647

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$2.406	$120.30
100 - 150	$2.346	$117.30
200 +	$2.31	$115.50
*price indicative

RS Stock No.:: 124-1664
Mfr. Part No.:: RFP70N06
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	70 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	120 nC @ 20 V
Length	10.67mm
Width	4.83mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	9.4mm