FDMC89521L Dual N-Channel MOSFET, 8.2 A, 60 V PowerTrench, 8-Pin Power 33 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 8.2 A
Maximum Drain Source Voltage 60 V
Package Type Power 33
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 27 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.9 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Width 3mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Series PowerTrench
Height 0.75mm
Typical Gate Charge @ Vgs 17 nC @ 10 V
Length 3mm
18000 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (On a Reel of 3000)
$ 1.298
(exc. GST)
$ 1.428
(inc. GST)
units
Per unit
Per Reel*
3000 +
$1.298
$3,894.00
*price indicative
Related Products
SH8J31 is complex type (Pch+Pch) middle power MOSFET ...
Description:
SH8J31 is complex type (Pch+Pch) middle power MOSFET for Motor Drive application Low on - resistance.Small Surface Mount Package (SOP8).Pb-free lead plating.Halogen Free.
Complex type MOSFETs(N+N) are made as low ON-resistance ...
Description:
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. 4V-drive type Nch Middle-power ...
ON Semiconductors range of P-Channel MOSFETS are produced ...
Description:
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. • ...
ON Semiconductors range of P-Channel MOSFETS are produced ...
Description:
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. • ...