N-Channel MOSFET, 25 A, 650 V, 3-Pin TO-247 STMicroelectronics STW33N60DM2
- RS Stock No.:
- 111-6481
- Mfr. Part No.:
- STW33N60DM2
- Brand:
- STMicroelectronics
Discontinued product
- RS Stock No.:
- 111-6481
- Mfr. Part No.:
- STW33N60DM2
- Brand:
- STMicroelectronics
Legislation and Compliance
Product Details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 190 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Typical Gate Charge @ Vgs | 47 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 15.75mm |
| Transistor Material | Si |
| Width | 5.15mm |
| Series | MDmesh DM2 |
| Forward Diode Voltage | 1.6V |
| Height | 20.15mm |
| Minimum Operating Temperature | -55 °C |