N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon IPD220N06L3GBTMA1

RS Stock No.:: 110-7435
Mfr. Part No.:: IPD220N06L3GBTMA1
Brand:: Infineon

N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon IPD220N06L3GBTMA1

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Available for back order.

Added

Price (ex. GST) Each (In a Pack of 50)

$1.641

(exc. GST)

$1.805

(inc. GST)

Units	Per unit	Per Pack*
50 - 600	$1.641	$82.05
650 - 1200	$1.602	$80.10
1250 +	$1.575	$78.75
*price indicative

RS Stock No.:: 110-7435
Mfr. Part No.:: IPD220N06L3GBTMA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Series	OptiMOS 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	39.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	36 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.73mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	7 nC @ 4.5 V
Transistor Material	Si
Width	6.22mm
Number of Elements per Chip	1
Forward Diode Voltage	1.2V
Height	2.41mm
Minimum Operating Temperature	-55 °C