- RS Stock No.:
- 110-7433
- Mfr. Part No.:
- IPD80P03P4L07ATMA1
- Brand:
- Infineon
Discontinued product
- RS Stock No.:
- 110-7433
- Mfr. Part No.:
- IPD80P03P4L07ATMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 30 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 12 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 88 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +5 V |
Number of Elements per Chip | 1 |
Width | 6.22mm |
Maximum Operating Temperature | +175 °C |
Length | 6.73mm |
Typical Gate Charge @ Vgs | 63 nC @ 10 V |
Transistor Material | Si |
Height | 2.41mm |
Forward Diode Voltage | 1.3V |
Series | OptiMOS P |
Minimum Operating Temperature | -55 °C |