N-Channel MOSFET, 3.2 A, 60 V, 4-Pin SOT-89 Infineon BSS606NH6327XTSA1

RS Stock No.:: 110-7170
Mfr. Part No.:: BSS606NH6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 3.2 A, 60 V, 4-Pin SOT-89 Infineon BSS606NH6327XTSA1

This image is representative of the product range

On back order for despatch 25/04/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Pack of 50)

$0.634

(exc. GST)

$0.697

(inc. GST)

Units	Per unit	Per Pack*
50 - 200	$0.634	$31.70
250 - 450	$0.619	$30.95
500 +	$0.609	$30.45
*price indicative

RS Stock No.:: 110-7170
Mfr. Part No.:: BSS606NH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.2 A
Maximum Drain Source Voltage	60 V
Series	OptiMOS 3
Package Type	SOT-89
Mounting Type	Surface Mount
Pin Count	4
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Minimum Gate Threshold Voltage	1.3V
Maximum Power Dissipation	1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	3.7 nC @ 5 V
Length	4.5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	2.5mm
Height	1.5mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C