Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1
- RS Stock No.:
- 110-7129
- Mfr. Part No.:
- BSL316CH6327XTSA1
- Brand:
- Infineon
31500 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 60)
$0.685
(exc. GST)
$0.753
(inc. GST)
| Units | Per unit | Per Pack* |
| 60 - 720 | $0.685 | $41.10 |
| 780 - 1440 | $0.668 | $40.08 |
| 1500 + | $0.657 | $39.42 |
| *price indicative | ||
- RS Stock No.:
- 110-7129
- Mfr. Part No.:
- BSL316CH6327XTSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™ Dual Power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.4 A, 1.5 A |
| Maximum Drain Source Voltage | 30 V |
| Series | OptiMOS |
| Package Type | TSOP-6 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 270 mΩ, 280 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 2.9mm |
| Typical Gate Charge @ Vgs | 0.6 nC @ 5 V, 2.4 nC @ 5 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 1.6mm |
| Height | 1mm |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |