N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 Infineon IRF5801TRPBF

RS Stock No.:: 301-631
Mfr. Part No.:: IRF5801TRPBF
Brand:: Infineon

N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 Infineon IRF5801TRPBF

14170 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 10)

$0.789

(exc. GST)

$0.868

(inc. GST)

Units	Per unit	Per Pack*
10 - 740	$0.789	$7.89
750 - 1490	$0.785	$7.85
1500 +	$0.774	$7.74
*price indicative

RS Stock No.:: 301-631
Mfr. Part No.:: IRF5801TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	600 mA
Maximum Drain Source Voltage	200 V
Package Type	TSOP
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	2.2 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	3mm
Width	1.5mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	3.9 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.9mm