- RS Stock No.:
- 194-552
- Mfr. Part No.:
- IXFH44N50P
- Brand:
- IXYS
1 In stock for delivery within 1 working day(s)
Added
Price (ex. GST) Each
Was $18.17
You pay
$14.72
(exc. GST)
$16.19
(inc. GST)
Units | Per unit |
1 - 7 | $14.72 |
8 - 14 | $14.46 |
15 + | $14.18 |
- RS Stock No.:
- 194-552
- Mfr. Part No.:
- IXFH44N50P
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 44 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-247AD |
Series | HiperFET, Polar |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 140 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 650 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Typical Gate Charge @ Vgs | 98 nC @ 10 V |
Transistor Material | Si |
Width | 5.3mm |
Length | 16.26mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 21.46mm |