N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P
- RS Stock No.:
- 193-464
- Mfr. Part No.:
- IXFN102N30P
- Brand:
- IXYS
On back order for despatch 14/10/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each
$44.17
(exc. GST)
$48.59
(inc. GST)
| Units | Per unit |
| 1 - 2 | $44.17 |
| 3 - 4 | $43.60 |
| 5 + | $42.41 |
- RS Stock No.:
- 193-464
- Mfr. Part No.:
- IXFN102N30P
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 86 A |
| Maximum Drain Source Voltage | 300 V |
| Series | HiperFET, Polar |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 570 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 38.23mm |
| Number of Elements per Chip | 1 |
| Width | 25.42mm |
| Typical Gate Charge @ Vgs | 224 nC @ 10 V |
| Transistor Material | Si |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |