Infineon IKW40N120T2FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 906-4488
Mfr. Part No.:: IKW40N120T2FKSA1
Brand:: Infineon

Infineon IKW40N120T2FKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

6 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 2)

$13.59

(exc. GST)

$14.95

(inc. GST)

Units	Per unit	Per Pack*
2 - 6	$13.59	$27.18
8 - 14	$13.26	$26.52
16 +	$13.055	$26.11
*price indicative

RS Stock No.:: 906-4488
Mfr. Part No.:: IKW40N120T2FKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	75 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	480 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+175 °C
Gate Capacitance	2360pF
Energy Rating	8.3mJ