STMicroelectronics STGP10M65DF2 IGBT, 20 A 650 V, 3-Pin TO-220, Through Hole

RS Stock No.:: 906-2795
Mfr. Part No.:: STGP10M65DF2
Brand:: STMicroelectronics

STMicroelectronics STGP10M65DF2 IGBT, 20 A 650 V, 3-Pin TO-220, Through Hole

This image is representative of the product range

75 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 5)

$1.93

(exc. GST)

$2.12

(inc. GST)

Units	Per unit	Per Pack*
5 +	$1.93	$9.65
*price indicative

RS Stock No.:: 906-2795
Mfr. Part No.:: STGP10M65DF2
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

IGBT Discretes, STMicroelectronics

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	20 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	115 W
Package Type	TO-220
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	10.4 x 4.6 x 15.75mm
Maximum Operating Temperature	+175 °C
Energy Rating	0.66mJ
Minimum Operating Temperature	-55 °C
Gate Capacitance	840pF