Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P

  • RS Stock No. 891-2746
  • Mfr. Part No. GT40WR21,Q(O
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1800 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 375 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.55µs
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Maximum Operating Temperature 175 °C
Gate Capacitance 4500pF
6 : Next working day (AU stock)
20 : 5 working days (Global stock)
Price (ex. GST) Each
$ 7.56
(exc. GST)
$ 8.32
(inc. GST)
units
Per unit
1 - 19
$7.56
20 - 49
$6.79
50 - 99
$6.11
100 - 249
$5.92
250 +
$5.86
Packaging Options:
Related Products
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar ...
Description:
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability ...
Low Collector - Emitter Saturation Voltage High Speed ...
Description:
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
Single IGBT over 21A, Infineon Optimised IGBTs designed ...
Description:
Single IGBT over 21A, Infineon Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available Utilising FRED diodes optimised to provide the best performance with IGBT's. Optimised IGBTs designed for medium ...
Single IGBT up to 20A, Infineon Optimised IGBTs ...
Description:
Single IGBT up to 20A, Infineon Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available These devices utilise FRED diodes optimised to provide the best performance with IGBTs. Optimised IGBTs ...