Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P

  • RS Stock No. 891-2743
  • Mfr. Part No. GT40QR21,F(O
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 230 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.4µs
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Energy Rating 0.29mJ
Maximum Operating Temperature 175 °C
Gate Capacitance 1500pF
8 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 13.76
(exc. GST)
$ 15.14
(inc. GST)
units
Per unit
1 - 19
$13.76
20 - 49
$9.78
50 - 99
$7.82
100 - 249
$7.04
250 +
$6.69
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