- RS Stock No.:
- 877-2908
- Mfr. Part No.:
- STGW35HF60WD
- Brand:
- STMicroelectronics
Discontinued product
Alternative
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- RS Stock No.:
- 877-2908
- Mfr. Part No.:
- STGW35HF60WD
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 200 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 24.45mm |
Maximum Operating Temperature | +150 °C |
Energy Rating | 770mJ |
Minimum Operating Temperature | -55 °C |
Gate Capacitance | 2400pF |