- RS Stock No.:
- 877-2873
- Mfr. Part No.:
- STGF10NB60SD
- Brand:
- STMicroelectronics
- RS Stock No.:
- 877-2873
- Mfr. Part No.:
- STGF10NB60SD
- Brand:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 23 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 25 W |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 20mm |
Gate Capacitance | 610pF |
Minimum Operating Temperature | -55 °C |
Energy Rating | 8mJ |
Maximum Operating Temperature | +150 °C |
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