onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole

RS Stock No.:: 864-8782
Mfr. Part No.:: FGA40N65SMD
Brand:: onsemi

onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole

This image is representative of the product range

22 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 2)

$7.255

(exc. GST)

$7.981

(inc. GST)

Units	Per unit	Per Pack*
2 - 6	$7.255	$14.51
8 - 38	$7.09	$14.18
40 +	$5.84	$11.68
*price indicative

RS Stock No.:: 864-8782
Mfr. Part No.:: FGA40N65SMD
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Discrete IGBTs, Fairchild Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	349 W
Package Type	TO-3PN
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.2 x 5 x 20.1mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C