STMicroelectronics STGWT30H60DFB IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole

RS Stock No.:: 860-7325
Mfr. Part No.:: STGWT30H60DFB
Brand:: STMicroelectronics

STMicroelectronics STGWT30H60DFB IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole

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150 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 2)

$6.285

(exc. GST)

$6.913

(inc. GST)

Units	Per unit	Per Pack*
2 +	$6.285	$12.57
*price indicative

RS Stock No.:: 860-7325
Mfr. Part No.:: STGWT30H60DFB
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, STMicroelectronics

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IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	60 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	260 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.8 x 5 x 14.1mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C