Infineon IKP20N60TAHKSA1 IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

RS Stock No.:: 857-8595
Mfr. Part No.:: IKP20N60TAHKSA1
Brand:: Infineon

Infineon IKP20N60TAHKSA1 IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

This image is representative of the product range

Available for back order.

Added

Price (ex. GST) Each (In a Tube of 500)

$2.755

(exc. GST)

$3.031

(inc. GST)

Units	Per unit	Per Tube*
500 - 500	$2.755	$1,377.50
1000 - 2000	$2.736	$1,368.00
2500 +	$2.708	$1,354.00
*price indicative

RS Stock No.:: 857-8595
Mfr. Part No.:: IKP20N60TAHKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	70 W
Package Type	TO-220AB
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	10.36 x 4.57 x 15.95mm
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+150 °C