Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN

  • RS Stock No. 799-4889
  • Mfr. Part No. GT60PR21,STA1F(S
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1100 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 333 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Maximum Operating Temperature +175 °C
21 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 10.47
(exc. GST)
$ 11.52
(inc. GST)
units
Per unit
1 - 19
$10.47
20 - 49
$7.39
50 - 99
$5.93
100 - 249
$5.61
250 +
$5.49
Related Products
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 1100 to 1600V• Very low ...
Insulated Gate Bipolar Transistors (IGBT) for motor drive ...
Description:
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
ROHM's IGBT products will contribute to energy saving ...
Description:
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. Low Collector - Emitter Saturation VoltageLow Switching LossShort Circuit Withstand Time 5usBuilt in Very Fast & Soft Recovery FRD (RFN ...