Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN

  • RS Stock No. 799-4864
  • Mfr. Part No. GT40WR21,Q(O
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1800 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 375 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Maximum Operating Temperature +175 °C
35 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 14.57
(exc. GST)
$ 16.03
(inc. GST)
units
Per unit
1 - 19
$14.57
20 - 49
$12.46
50 - 99
$11.24
100 - 249
$10.93
250 +
$10.82
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