STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263)

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 20 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 65 W
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.4mm
Width 9.35mm
Height 4.6mm
Dimensions 10.4 x 9.35 x 4.6mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
1235 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$ 1.914
(exc. GST)
$ 2.105
(inc. GST)
units
Per unit
Per Pack*
5 - 20
$1.914
$9.57
25 - 45
$1.84
$9.20
50 - 245
$1.628
$8.14
250 - 495
$1.534
$7.67
500 +
$1.372
$6.86
*price indicative
Packaging Options: