STMicroelectronics STGWT20V60F IGBT, 40 A 600 V, 3-Pin TO-3P

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 167 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Dimensions 15.8 x 5 x 20.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
222 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 2)
$ 3.92
(exc. GST)
$ 4.31
(inc. GST)
units
Per unit
Per Pack*
2 - 18
$3.92
$7.84
20 - 38
$3.785
$7.57
40 - 98
$3.54
$7.08
100 - 498
$3.30
$6.60
500 +
$3.095
$6.19
*price indicative
Packaging Options:
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Description:
IGBT Discretes, Renesas Electronics The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability ...