Toshiba GT40T321,Q(O IGBT, 40 A 1500 V, 3-Pin TO-3PN

  • RS Stock No. 756-0559
  • Mfr. Part No. GT40T321,Q(O
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1500 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 230 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.24µs
Transistor Configuration Single
Length 20mm
Width 15.9mm
Height 4.8mm
Dimensions 20 x 15.9 x 4.8mm
Maximum Operating Temperature +175 °C
Temporarily out of stock - back order for despatch when stock is available
Price (ex. GST) Each
$ 7.39
(exc. GST)
$ 8.13
(inc. GST)
units
Per unit
1 - 9
$7.39
10 - 49
$6.71
50 - 99
$6.64
100 - 249
$6.56
250 +
$6.50
Packaging Options:
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
Insulated Gate Bipolar Transistors (IGBT) for motor drive ...
Description:
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...