Infineon SGW30N60FKSA1 IGBT, 41 A 600 V, 3-Pin TO-247

  • RS Stock No. 462-3102
  • Mfr. Part No. SGW30N60FKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon Discrete IGBT Transistors

Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 41 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.9mm
Width 5.3mm
Height 20.95mm
Dimensions 15.9 x 5.3 x 20.95mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
11 : Next working day (AU stock)
90 : 5 working days (Global stock)
Price (ex. GST) Each
$ 6.55
(exc. GST)
$ 7.21
(inc. GST)
Per unit
1 - 9
10 +
Packaging Options:
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