- RS Stock No.:
- 204-9878
- Mfr. Part No.:
- STGWA30H65DFB2
- Brand:
- STMicroelectronics
10 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 5)
$4.918
(exc. GST)
$5.41
(inc. GST)
Units | Per unit | Per Pack* |
5 + | $4.918 | $24.59 |
*price indicative |
- RS Stock No.:
- 204-9878
- Mfr. Part No.:
- STGWA30H65DFB2
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Number of Transistors | 1 |
Maximum Power Dissipation | 167 W |
Package Type | TO-247 |
Pin Count | 3 |
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