ON Semiconductor FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 181-1929
- Mfr. Part No.:
- FGH75T65SQDNL4
- Manufacturer:
- ON Semiconductor
- COO (Country of Origin):
- CN
units | Per unit |
1 - 9 | $11.72 |
10 - 49 | $10.84 |
50 - 99 | $9.75 |
100 - 249 | $8.83 |
250 + | $7.99 |
Attribute | Value |
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 375 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | P |
Pin Count | 4 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.8 x 5.2 x 22.74mm |
Gate Capacitance | 5100pF |
Maximum Operating Temperature | +175 °C |
Energy Rating | 160µJ |
Minimum Operating Temperature | -55 °C |