MOSFET Vishay SIA817EDJ-T1-GE3
- RS Stock No.:
- 180-7827
- Mfr. Part No.:
- SIA817EDJ-T1-GE3
- Brand:
- Vishay
On back order for despatch 19/09/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 25)
$0.53
(exc. GST)
$0.58
(inc. GST)
| Units | Per unit | Per Pack* |
| 25 - 725 | $0.53 | $13.25 |
| 750 - 1475 | $0.516 | $12.90 |
| 1500 + | $0.508 | $12.70 |
| *price indicative | ||
- RS Stock No.:
- 180-7827
- Mfr. Part No.:
- SIA817EDJ-T1-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.
Little foot plus Schottky power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
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