onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole
- RS Stock No.:
- 178-4321
- Mfr. Part No.:
- FGH40T120SQDNL4
- Brand:
- onsemi
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Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each (In a Tube of 30)
$9.787
(exc. GST)
$10.766
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 30 | $9.787 | $293.61 |
| 60 - 90 | $9.543 | $286.29 |
| 120 + | $9.396 | $281.88 |
| *price indicative | ||
- RS Stock No.:
- 178-4321
- Mfr. Part No.:
- FGH40T120SQDNL4
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
ON Semiconductor IGBT
The ON Semiconductor is a P-channel TO−247−4L IGBT through-hole mount transistor. It has a maximum current rating of 160A and a maximum voltage rating of 1200V. This IGBT is a robust and cost-effective device that provides superior performance in demanding switching applications. It offers both low on-state voltage and minimal switching loss. A soft and fast co−packaged free wheeling diode with a low forward voltage is incorporated into this device.
Features and Benefits
• Cost effective
• Extremely efficient trench with field stop technology
• Halide-free device
• High durability
• Operating temperature ranges between -55°C and 175°C
• Optimized for high speed switching
• Pb-free device
• Soft fast reverse recovery diode
• TJmax is 175°C
• Extremely efficient trench with field stop technology
• Halide-free device
• High durability
• Operating temperature ranges between -55°C and 175°C
• Optimized for high speed switching
• Pb-free device
• Soft fast reverse recovery diode
• TJmax is 175°C
Applications
• Solar inverters
• UPS
• Welding
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 160 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±30V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 454 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 4 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5.2 x 22.74mm |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 5000pF |
| Minimum Operating Temperature | -55 °C |