STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 10 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 88 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Dimensions 10.4 x 4.6 x 15.75mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Energy Rating 221µJ
Gate Capacitance 855pF
350 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 50)
$ 1.47
(exc. GST)
$ 1.62
(inc. GST)
Per unit
Per Tube*
50 +
*price indicative