STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

RS Stock No.:: 168-8940
Mfr. Part No.:: STGP5H60DF
Brand:: STMicroelectronics

STMicroelectronics STGP5H60DF IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

This image is representative of the product range

50 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 50)

$2.212

(exc. GST)

$2.433

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$2.212	$110.60
250 +	$1.99	$99.50
*price indicative

RS Stock No.:: 168-8940
Mfr. Part No.:: STGP5H60DF
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

IGBT Discretes, STMicroelectronics

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	10 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	88 W
Package Type	TO-220
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	10.4 x 4.6 x 15.75mm
Minimum Operating Temperature	-55 °C
Gate Capacitance	855pF
Maximum Operating Temperature	+175 °C
Energy Rating	221mJ