Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P

  • RS Stock No. 168-7767
  • Mfr. Part No. GT50JR21
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 230 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Maximum Operating Temperature +175 °C
50 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 25)
$ 7.00
(exc. GST)
$ 7.70
(inc. GST)
units
Per unit
Per Tube*
25 +
$7.00
$175.00
*price indicative
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