Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS

  • RS Stock No. 168-7764
  • Mfr. Part No. GT20J341
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 20 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 45 W
Package Type TO-220SIS
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 100kHz
Transistor Configuration Single
Length 10mm
Width 4.5mm
Height 15mm
Dimensions 10 x 4.5 x 15mm
Maximum Operating Temperature +150 °C
250 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$ 3.597
(exc. GST)
$ 3.957
(inc. GST)
units
Per unit
Per Tube*
50 +
$3.597
$179.85
*price indicative
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