STMicroelectronics STGF3NC120HD IGBT, 6 A 1200 V, 3-Pin TO-220FP

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 6 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 25 W
Package Type TO-220FP
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.4mm
Width 4.6mm
Height 16.4mm
Dimensions 10.4 x 4.6 x 16.4mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
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Price (ex. GST) Each (In a Tube of 50)
$ 2.11
(exc. GST)
$ 2.32
(inc. GST)
units
Per unit
Per Tube*
50 +
$2.11
$105.50
*price indicative
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