STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 168-7002
Mfr. Part No.:: STGW30V60DF
Brand:: STMicroelectronics

STMicroelectronics STGW30V60DF IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

On back order for despatch 17/10/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 30)

$5.422

(exc. GST)

$5.964

(inc. GST)

Units	Per unit	Per Tube*
30 - 120	$5.422	$162.66
150 +	$4.88	$146.40
*price indicative

RS Stock No.:: 168-7002
Mfr. Part No.:: STGW30V60DF
Brand:: STMicroelectronics

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

IGBT Discretes, STMicroelectronics

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	258 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	15.75 x 5.15 x 20.15mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C