Infineon IRG4PSC71KDPBF IGBT, 85 A 600 V, 3-Pin TO-247AA

  • RS Stock No. 165-5430
  • Mfr. Part No. IRG4PSC71KDPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

Co-Pack IGBT over 21A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Attribute Value
Maximum Continuous Collector Current 85 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 350 W
Package Type TO-247AA
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 8 → 30kHz
Transistor Configuration Single
Length 16.1mm
Width 5.3mm
Height 20.8mm
Dimensions 16.1 x 5.3 x 20.8mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
On back order for despatch 08/10/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Tube of 25)
$ 31.42
(exc. GST)
$ 34.56
(inc. GST)
Per unit
Per Tube*
25 +
*price indicative